讲坛题目：Oxides with high dielectric permittivity and their application in integrated electronic
主讲人：顿尘颈迟谤颈测Golosov副教授
讲座时间：2023年5月8日，14:30-16:30
讲座地点：工7-412
主办单位：研究生院
承办单位：光电工程学院
摘要：
The presentation discusses the problems of scaling modern integrated circuits and the use of silicon oxide in MOS structures. The requirements for materials for use as a gate dielectric of MOSFET transistors are determined. The properties and features of the formation of films of high-k dielectrics based on simple and complex oxides are considered.
个人介绍(resume)：
DmitriyGolosov,PhD,associateprofessor,leadingreseacherofPlasmaProcessingResearchCenter,BelarusianStateUniversityofInformaticsandRadioelectronics.
